IRG4RC10KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A

IRG4RC10KD similaires

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IRG4RC10KD Datasheet et spécifications

Fabricant : IR

Emballage : TO-252AA

Pins : 3

Température : Min -55 °C | Max 150 °C

Taille : 208 KB

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A