Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IRG4RC10SD
IRG4RC10SD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Chemin:OKDatasheet > Fiche de Semi-conducteurs > IR Datasheet > IRG4RC10SD
IRG4RC10SD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Fabricant : IR
Emballage : D-PAK
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 207 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A