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1N5393 similaires

  • 1N5391
    • 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
  • 1N5391G
    • 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
  • 1N5391G
    • 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
  • 1N5392
    • 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
  • 1N5392G
    • 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
  • 1N5393
    • 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
  • 1N5393G
    • 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
  • 1N5395
    • 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.

1N5393 Datasheet et spécifications

Fabricant : JGD 

Emballage : DO-15 

Pins : 2 

Température : Min -65 °C | Max 125 °C

Taille : 161 KB

Application : 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. 

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