| Partie n | Fabricant | Application |
|---|
| KBP210 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5919 | JGD | 1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-20% tolerance. |
| SMBJ5955B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-5% tolerance. |
| ES1C | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 150 V. |
| FR202 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| W04M | JGD | Single phase silicon bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.5 A. |
| ZMM5249D | JGD | Surface mount zener diode. Nominal zener voltage 19 V. Test current 6.6 mA. +-20% tolerance. |
| SMAJ170 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 170 V. |
| 3EZ11D | JGD | 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-20% tolerance. |
| 1N4620D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.3V. 1% tolerance. |
| SFR204 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 2.0 A. |
| 1N958B | JGD | 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-5% tolerance. |
| P4KE120C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. Bidirectional. |
| P6KE350C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
| SMBJ5922D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-1% tolerance. |
| SMBJ5943A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance. |
| 1N5956C | JGD | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. |
| SMBJ8.0 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.89 V (min), 10.9 V (max). Test current 1.0 mA. |
| P6KE36CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional. |
| ZMM55-B3V9 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-2% tolerance. |
| SMAJ17 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. |
| P6KE110C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional. |
| KBU806 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| KBL410 | JGD | Single-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| 3EZ3.9D5 | JGD | 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-5% tolerance. |
| SMBJ100A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 111 V (min), 123 V (max). Test current 1.0 mA. |
| 1N961C | JGD | 0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-2% tolerance. |
| 3EZ22D3 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-3% tolerance. |
| SMAJ16C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional. |
| 3EZ82D | JGD | 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-20% tolerance. |
