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Partie nApplication
MDE-25D221K 220V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc
P6KE11A 9.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA85A 85.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-10D181K 180V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
SMDJ40A 40.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE30A 25.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE18A 14.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SMBJ28A 28.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ90A 90.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
3KP7.0A 7.00V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
1.5KE200 162.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMLJ40 40.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ6.5A 6.50V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE350A 300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-10D241K 240V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
15KP240 240V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
30KW36A 36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
3KP6.5 6.50V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX40-110.0C 110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
P6KE33A 28.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE160A 136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE91A 77.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE20 15.30V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
5KP58A 58.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-40D301K 300V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc
MAX40-9.0CA 9.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
15KP180 180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
5KP75 75.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications

MDE Semiconductor Profil

MDE Semiconductor, Inc. is an innovative, quality oriented device manufacturer with a Single Minded Focus on Circuit Protection Products. Our Transient Voltage Suppression (TVS) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lighting, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 648,000 watts.