BUZ901DP similaires

  • BUZ903P
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
  • BUZ906D
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
  • BUZ902D
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ908
    • P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ901X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
  • BUZ902
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
  • BUZ900X4S
    • N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ901DP Datasheet et spécifications

Fabricant : Magnatec 

Emballage : TO-3PBL 

Pins : 3 

Température : Min 0 °C | Max 150 °C

Taille : 42 KB

Application : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. 

BUZ901DP PDF Download