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BD241B spec: 4mW NPN silicon epitaxial base power transistor
BD241B similaires
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD241B Datasheet et spécifications
Fabricant : Micro Electronics
Emballage : TO-220B
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 106 KB
Application : 4mW NPN silicon epitaxial base power transistor
BD241B PDF Download