Chemin:okDatasheet > Fiche de Semi-conducteurs > Micron Datasheet > Micron-24
F322P3FJ-80BET MT28F642D18FN-804BET MT28F322D20FH-704TET MT49H16M16FM-5 MT48LC16M8A2TG-7EL MT58L512Y36DF-7.5 MT28F321P20FG-80TET MT28F004B5VG-6B MT4LC4M4E8TGS-6 MT28S2M32B1LCFG-75ET MT46V32M8FJ-75Z MT4LC4M4E8DJ MT46V2M32V1LG-6 MT28F800B3WG-9T MT55L256V32PF-6 MT28F322D18FH-705BET
Partie n | Fabricant | Application |
---|---|---|
MT28F200B3WG-9B | Micron | 128K x 16; 3V only, dual supply, smart 3 boot block flash memory |
MT28F322P3FJ-80BET | Micron | 2Meg x 16 async/page/burst flash memory |
MT28F642D18FN-804BET | Micron | 2Meg x 16; 40MHz async/page/burst flash memory |
MT28F322D20FH-704TET | Micron | 2Meg x 16 async/page/burst flash memory |
MT49H16M16FM-5 | Micron | 1Meg x 32 x 8 banks, DRAM |
MT48LC16M8A2TG-7EL | Micron | 3.3V, 16Meg x 8-bit SDRAM, 7.5ns, low power |
MT58L512Y36DF-7.5 | Micron | 3.3V, 512K x 36 pipelined, DCD syncburst SRAM, 7.5ns |
MT28F321P20FG-80TET | Micron | 2Meg x 16 page flash memory |
MT28F004B5VG-6B | Micron | 512K x 8; 5V only, dual supply, smart 5 boot block flash memory |
MT4LC4M4E8TGS-6 | Micron | 4Meg x 4 banks, EDO DRAM, 3.3V, self refresh, 60ns |
MT28S2M32B1LCFG-75ET | Micron | 512K x 32 x 4banks, 133MHz syncflash memory |
MT46V32M8FJ-75Z | Micron | 8 Meg x 8 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM |
MT4LC4M4E8DJ | Micron | 4Meg x 4 banks, EDO DRAM |
MT46V2M32V1LG-6 | Micron | 512K x 32 x 4banks, CL=3, 166MHz double data rate (DDR) SDRAM |
MT28F800B3WG-9T | Micron | 1Meg x 8; 3V only, dual supply, smart 3 boot block flash memory |
MT55L256V32PF-6 | Micron | 256K x 32 ZBT SRAM, 6ns |
MT28F322D18FH-705BET | Micron | 2Meg x 16 async/page/burst flash memory |
MT28F322D18FH-805BET | Micron | 2Meg x 16 async/page/burst flash memory |
MT28F128J3RG-12 | Micron | 64Mb Q-flash memory |
MT58V512V36DF-10 | Micron | 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns |