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16M16LFFG-10 MT58L1MY18DT-10 MT58V1MV18DT-6 MT46V32M8FJ-6T MT55L512L12PT-7.5 MT28C3212P2FL-11TET MT28F642D20FN-705TET MT4C4001JZ-7 MT4LC4M4B1TG-6S MT28C3212P2NFL-10T MT4LC4M4E9DJ-6 MT28F400B3WG-8T MT28S2M32B1LCTG-75 MT28C3212P2FL-11TET MT28F642D20FN-705TET MT4C4001JZ-7 MT48H16M16
Partie n | Fabricant | Application |
---|---|---|
MT4C4001JDJ-7S | Micron | 1M x 4 DRAM self refresh, 70ns |
MT48H16M16LFFG-10 | Micron | 16Meg x 16 x 4 banks; 1.8V mobile SDRAM |
MT58L1MY18DT-10 | Micron | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns |
MT58V1MV18DT-6 | Micron | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns |
MT46V32M8FJ-6T | Micron | 8 Meg x 8 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM |
MT55L512L12PT-7.5 | Micron | 512K x 18 ZBT SRAM, 7.5ns |
MT28C3212P2FL-11TET | Micron | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory |
MT28F642D20FN-705TET | Micron | 2Meg x 16; 50MHz async/page/burst flash memory |
MT4C4001JZ-7 | Micron | 1M x 4 DRAM fast page mode, 70ns |
MT4LC4M4B1TG-6S | Micron | 4Meg x 4, 3,3V FPM DRAM |
MT28C3212P2NFL-10T | Micron | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory |
MT4LC4M4E9DJ-6 | Micron | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns |
MT28F400B3WG-8T | Micron | 512K x 8; 3V only, dula supply, smart 3 boot block flash memory |
MT28S2M32B1LCTG-75 | Micron | 512K x 32 x 4banks, 133MHz syncflash memory |
MT28C3212P2FL-11TET | Micron | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory |
MT28F642D20FN-705TET | Micron | 2Meg x 16; 50MHz async/page/burst flash memory |
MT4C4001JZ-7 | Micron | 1M x 4 DRAM fast page mode, 70ns |
MT48H16M16LFFG-10 | Micron | 16Meg x 16 x 4 banks; 1.8V mobile SDRAM |
MT4C4001JDJ-7S | Micron | 1M x 4 DRAM self refresh, 70ns |
MT58L1MY18DT-10 | Micron | 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns |
MT58V1MV18DT-6 | Micron | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns |
MT4C4001JZ-8L | Micron | 1M x 4 DRAM extended refresh, 80ns, low power |
MT46V2M32V1LG-5 | Micron | 512K x 32 x 4banks, CL=3, 200MHz double data rate (DDR) SDRAM |
MT48LC16M8A2TG-7E | Micron | 8 Meg x 4 x 4banks, PC133, CL=2 SDRAM |
MT4LC4M16R6-5 | Micron | 4Meg x 16 EDO DRAM |
MT48V8M16LFFF-10 | Micron | 2Meg x 16 x 4 banks; 100MHz synchronous DRAM |
MT48LC64M8A2TG-7E | Micron | 16Meg x 8 x 4banks, CL=2, 133MHz synchronous DRAM |
MT28F640J3FS-11ET | Micron | 32Mb Q-flash memory |
MT28S2M32B1LCTG-75ET | Micron | 512K x 32 x 4banks, 133MHz syncflash memory |
MT4C4001JZ-6 | Micron | 1M x 4 DRAM fast page mode, 60ns |