Chemin:OKDatasheet > Fiche de Semi-conducteurs > Mitsubishi Datasheet > ML601J28
ML601J28 spec: High power AlGaAs semiconductor laser diode for optical information systems
ML601J28 similaires
- ML60114R
- High power AlGaAs semiconductor laser diode
- ML60115R
- High power AlGaAs semiconductor laser diode
- ML60116R
- High power AlGaAs semiconductor laser diode
- ML60116R
- High power AlGaAs semiconductor laser diode
- ML60124R
- High power AlGaAs semiconductor laser diode
- ML60125R
- High power AlGaAs semiconductor laser diode for optical information systems
- ML60127R
- High power AlGaAs semiconductor laser diode for optical information systems
- ML60128R
- High power AlGaAs semiconductor laser diode for optical information systems
ML601J28 Datasheet et spécifications
Fabricant : Mitsubishi
Emballage :
Pins : 3
Température : Min -10 °C | Max 60 °C
Taille : 23 KB
Application : High power AlGaAs semiconductor laser diode for optical information systems
ML601J28 PDF Download