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MGW12N120 spec: Insulated gate bipolar transistor
MGW12N120 similaires
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120 Datasheet et spécifications
Fabricant : Motorola
Emballage : TO-247AE
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 250 KB
Application : Insulated gate bipolar transistor
MGW12N120 PDF Download