MTB50N06VL similaires

  • MTB50N06EL
    • TMOS E-FET power field effect transistor D2PAK for surface mount
  • MTB50N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB50N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB50N06VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB52N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB52N06V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB52N06VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTB55N06Z
    • TMOS E-FET high energy power FET D2PAK for surface mount

MTB50N06VL Datasheet et spécifications

Fabricant : Motorola 

Emballage : DPAK 

Pins : 4 

Température : Min -55 °C | Max 175 °C

Taille : 273 KB

Application : TMOS V power field effect transistor D2PAK for surface mount 

MTB50N06VL PDF Download