Chemin:OKDatasheet > Fiche de Semi-conducteurs > Motorola Datasheet > MTD2955E
MTD2955E spec: TMOS E-FET power field effect transistor D2PAK for surface mount
MTD2955E similaires
- MTD20N03HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20N06HD
- HDTMOS E-FET power field effect transistor D2PAK for surface mount
- MTD20N06HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD20P03HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20P06HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD2955E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD2955V
- TMOS V power field effect transistor D2PAK for surface mount
MTD2955E Datasheet et spécifications
Fabricant : Motorola
Emballage : DPAK
Pins : 4
Température : Min -55 °C | Max 150 °C
Taille : 267 KB
Application : TMOS E-FET power field effect transistor D2PAK for surface mount
MTD2955E PDF Download