Chemin:OKDatasheet > Fiche de Semi-conducteurs > Motorola Datasheet > MTD3055V
MTD3055V spec: TMOS V power field effect transistor D2PAK for surface mount
MTD3055V similaires
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055V Datasheet et spécifications
Fabricant : Motorola
Emballage : DPAK
Pins : 4
Température : Min -55 °C | Max 175 °C
Taille : 226 KB
Application : TMOS V power field effect transistor D2PAK for surface mount
MTD3055V PDF Download