MTW10N100E similaires

  • MTW10N100E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW14N50E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW16N40E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW10N100E Datasheet et spécifications

Fabricant : Motorola 

Emballage : TO-247AE 

Pins : 4 

Température : Min -55 °C | Max 150 °C

Taille : 211 KB

Application : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole 

MTW10N100E PDF Download