MTW6N100E spec: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E similaires

MTW6N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E Datasheet et spécifications

Fabricant : Motorola

Emballage : TO-247AE

Pins : 4

Température : Min -55 °C | Max 150 °C

Taille : 214 KB

Application : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole