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NE321000 spec: A GaAs HJ-FET chip for ultra low-noise high-gain amplification
NE321000 similaires
- NE321000
- A GaAs HJ-FET chip for ultra low-noise high-gain amplification
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- N-channel HJ-FET
- NE3210S01-T1
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- NE3210S01-T1B
- N-channel HJ-FET
- NE32484A
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
NE321000 Datasheet et spécifications
Fabricant : NEC
Emballage : Chip
Pins : 0
Température : Min 0 °C | Max 0 °C
Taille : 52 KB
Application : A GaAs HJ-FET chip for ultra low-noise high-gain amplification
NE321000 PDF Download