Chemin:OKDatasheet > Fiche de Semi-conducteurs > NEC Datasheet > NE4210S01-T1B
NE4210S01-T1B spec: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B similaires
- NE4210M01-T1
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
- N-channel HJ-FET
- NE429M01-T1
- N-channel HJ-FET
NE4210S01-T1B Datasheet et spécifications
Fabricant : NEC
Emballage : 4-pin u-x type mold
Pins : 0
Température : Min 0 °C | Max 0 °C
Taille : 71 KB
Application : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B PDF Download