Chemin:OKDatasheet > Fiche de Semi-conducteurs > NTE Electronic Datasheet > NTE6011
NTE6011 spec: Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A.
NTE6011 similaires
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6011 Datasheet et spécifications
Fabricant : NTE Electronic
Emballage : DO5
Pins : 2
Température : Min -65 °C | Max 160 °C
Taille : 21 KB
Application : Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A.
NTE6011 PDF Download