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BUL45D2 spec: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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BUL45D2 Datasheet et spécifications
Fabricant : ON Semiconductor
Emballage : TO-220
Pins : 3
Température : Min 0 °C | Max 0 °C
Taille : 488 KB
Application : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
BUL45D2 PDF Download