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MGP4N60ED spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGP4N60ED Datasheet et spécifications
Fabricant : ON Semiconductor
Emballage : TO-220
Pins : 3
Température : Min 0 °C | Max 0 °C
Taille : 160 KB
Application : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGP4N60ED PDF Download