MGP7N60E similaires

  • MGP7N60E
    • Insulated Gate Bipolar Transistor N-Channel
  • MGP7N60ED
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP7N60E Datasheet et spécifications

Fabricant : ON Semiconductor 

Emballage : TO-220 

Pins : 3 

Température : Min 0 °C | Max 0 °C

Taille : 129 KB

Application : Insulated Gate Bipolar Transistor N-Channel 

MGP7N60E PDF Download