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MGW20N120 spec: Insulated Gate Bipolar Transistor N-Channel
MGW20N120 similaires
- MGW20N120
- Insulated Gate Bipolar Transistor N-Channel
- MGW21N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGW20N120 Datasheet et spécifications
Fabricant : ON Semiconductor
Emballage : TO-247
Pins : 3
Température : Min 0 °C | Max 0 °C
Taille : 152 KB
Application : Insulated Gate Bipolar Transistor N-Channel
MGW20N120 PDF Download