MGY25N120D similaires

  • MGY20N120D
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
  • MGY25N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGY25N120
    • Insulated Gate Bipolar Transistor N-Channel
  • MGY25N120D
    • Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGY25N120D Datasheet et spécifications

Fabricant : ON Semiconductor 

Emballage : TO-3PBL 

Pins : 3 

Température : Min 0 °C | Max 0 °C

Taille : 188 KB

Application : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel 

MGY25N120D PDF Download