1N5355B spec: Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

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1N5355B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5355B Datasheet et spécifications

Fabricant : PanJit

Emballage : DO-201AE

Pins : 2

Température : Min -55 °C | Max 150 °C

Taille : 336 KB

Application : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA