2EZ110 spec: Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.

2EZ110 similaires

2EZ100
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 100.0 V. Test current Izt = 5.0 mA.
2EZ11
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 11.0 V. Test current Izt = 45.5 mA.
2EZ110
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
2EZ110
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
2EZ12
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA.
2EZ13
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2EZ14
- Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 14.0 V. Test current Izt = 35.7 mA.
2EZ140
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2EZ110 Datasheet et spécifications

Fabricant : PanJit

Emballage : D0-15

Pins : 2

Température : Min -55 °C | Max 150 °C

Taille : 134 KB

Application : Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.