VTE1163 spec: GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.

VTE1163 similaires

VTE1063
- GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1113
- GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1163
- GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1261
- GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1262
- GaAlAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281-1
- GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1281-2
- GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm).
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VTE1163 Datasheet et spécifications

Fabricant : PerkinElmer

Emballage : TO-46

Pins : 2

Température : Min -55 °C | Max 125 °C

Taille : 30 KB

Application : GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.