VTE3322LA spec: GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3322LA similaires

VTE3322LA
- GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3324LA
- GaAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).
VTE3372LA
- "GaALAs infrared emitting diode. Irradiance(typ) 2.6 mW/cm2 (distance 10.16 mm, diameter 2.1 mm)."
VTE3374LA
- GaALAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).

VTE3322LA Datasheet et spécifications

Fabricant : PerkinElmer

Emballage : T-1

Pins : 2

Température : Min -40 °C | Max 100 °C

Taille : 24 KB

Application : GaAs infrared emitting diode. Irradiance(typ) 1.3 mW/cm2 (distance 10.16 mm, diameter 2.1 mm).