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PHB112N06T spec: 55 V, N-channel enhancement mode field-effect transistor
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PHB112N06T Datasheet et spécifications
Fabricant : Philips
Emballage : SOT
Pins : 3
Température : Min -55 °C | Max 175 °C
Taille : 288 KB
Application : 55 V, N-channel enhancement mode field-effect transistor
PHB112N06T PDF Download