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PHB2N60E spec: 600 V, power MOS transistor avalanche energy rated
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PHB2N60E Datasheet et spécifications
Fabricant : Philips
Emballage : SOT
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 83 KB
Application : 600 V, power MOS transistor avalanche energy rated
PHB2N60E PDF Download