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PHB8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
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PHB8ND50E Datasheet et spécifications
Fabricant : Philips
Emballage : SOT
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 80 KB
Application : 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB8ND50E PDF Download