Chemin:OKDatasheet > Fiche de Semi-conducteurs > Philips Datasheet > PHD11N06LT
PHD11N06LT spec: TrenchMOS transistor. Logic level FET.
PHD11N06LT similaires
- PHD10N10E
- PowerMOS transistor
- PHD10N10E
- PowerMOS transistor
- PHD11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHD11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHD11N06LT
- TrenchMOS transistor. Logic level FET.
- PHD11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHD11N06LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHD12N10E
- PowerMOS transistor
PHD11N06LT Datasheet et spécifications
Fabricant : Philips
Emballage : SOT428
Pins : 3
Température : Min -55 °C | Max 175 °C
Taille : 83 KB
Application : TrenchMOS transistor. Logic level FET.
PHD11N06LT PDF Download