Chemin:OKDatasheet > Fiche de Semi-conducteurs > Philips Datasheet > PHD2N60E
PHD2N60E spec: PowerMOS transistor. Avalanche energy rated.
PHD2N60E similaires
- PHD20N06T
- 55 V, N-channel trenchMOS transistor
- PHD21N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHD21N06LT
- TrenchMOS transistor. Logic level FET.
- PHD23NQ10T
- N-channel TrenchMOS transistor
- PHD23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHD23NQ10T
- N-channel TrenchMOS transistor
- PHD24N03LT
- TrenchMOS(TM) transistor Logic level FET
- PHD27NQ10T
- N-channel TrenchMOS transistor
PHD2N60E Datasheet et spécifications
Fabricant : Philips
Emballage : SOT428
Pins : 3
Température : Min -55 °C | Max 150 °C
Taille : 103 KB
Application : PowerMOS transistor. Avalanche energy rated.
PHD2N60E PDF Download