PHW11N50E similaires

  • PHW10N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • PowerMOS transistor. Avalancne energy rated.
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW13N40E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW14N50E
    • PowerMOS transistor. Avalanche energy rated.

PHW11N50E Datasheet et spécifications

Fabricant : Philips 

Emballage : SOT429 

Pins : 3 

Température : Min -55 °C | Max 150 °C

Taille : 45 KB

Application : PowerMOS transistor. Avalancne energy rated. 

PHW11N50E PDF Download