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PHX4ND40E similaires

  • PHX4N40E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX4N50E
    • 500 V, power MOS transistor isolated version of PHP4N50E
  • PHX4N60E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX4N60E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX4ND40E
    • PowerMOS transistor. FREDFET, avalanche energy rated.

PHX4ND40E Datasheet et spécifications

Fabricant : Philips 

Emballage : SOT186A 

Pins : 3 

Température : Min -55 °C | Max 150 °C

Taille : 80 KB

Application : PowerMOS transistor. FREDFET, avalanche energy rated. 

PHX4ND40E PDF Download