PHX8ND50E similaires

  • PHX8N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8ND50E
    • PowerMOS transistor. FREDFET, avalanche energy rated.

PHX8ND50E Datasheet et spécifications

Fabricant : Philips 

Emballage : SOT186A 

Pins : 3 

Température : Min -55 °C | Max 150 °C

Taille : 82 KB

Application : PowerMOS transistor. FREDFET, avalanche energy rated. 

PHX8ND50E PDF Download