F1077 spec: 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1077 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 41 KB

Application : 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor