F1214 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 similaires

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 6

Température : Min -65 °C | Max 150 °C

Taille : 38 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor