F1510 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 similaires

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 2

Température : Min -65 °C | Max 150 °C

Taille : 39 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor