F2012 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 similaires

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 2

Température : Min -65 °C | Max 150 °C

Taille : 40 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor