F2048 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F2048
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2048 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 6

Température : Min -65 °C | Max 150 °C

Taille : 40 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor