F2202 spec: 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2202 similaires

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2202 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 2

Température : Min -65 °C | Max 150 °C

Taille : 40 KB

Application : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor