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F2213 similaires

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    • 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2212
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  • F2213
    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2213 Datasheet et spécifications

Fabricant : Polyfet RF 

Emballage :  

Pins : 4 

Température : Min -65 °C | Max 150 °C

Taille : 39 KB

Application : 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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