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F2247 similaires

  • F2246
    • 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2247
    • 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2248
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2247 Datasheet et spécifications

Fabricant : Polyfet RF 

Emballage :  

Pins : 6 

Température : Min -65 °C | Max 150 °C

Taille : 36 KB

Application : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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