F3002 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 similaires

F3002
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 4

Température : Min -65 °C | Max 150 °C

Taille : 39 KB

Application : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor