F5001 spec: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 similaires

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage :

Pins : 2

Température : Min -65 °C | Max 150 °C

Taille : 40 KB

Application : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor