P122 spec: "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 similaires

P122
- "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage : SO

Pins : 6

Température : Min -65 °C | Max 150 °C

Taille : 47 KB

Application : "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"