P123 spec: 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 similaires

P123
- 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 Datasheet et spécifications

Fabricant : Polyfet RF

Emballage : SO-8

Pins : 8

Température : Min -65 °C | Max 150 °C

Taille : 41 KB

Application : 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor