2SA1967 spec: NPN triple diffused planar silicon transistor, high-voltage amp, high-voltage switching application

2SA1967 similaires

2SA1011
- PNP epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
2SA1016
- PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
2SA1016K
- PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
2SA1177
- PNP epitaxial planar silicon transistor, HF amp application
2SA1207
- PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application
2SA1208
- PNP epitaxial planar silicon transistor, high-voltage switching, audio 80W output predriver application
2SA1209
- PNP epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application
2SA1209
- PNP transistors 160V/140mA high-voltage switching and AF 100W predriver applications

2SA1967 Datasheet et spécifications

Fabricant : SANYO

Emballage : 2010C

Pins : 3

Température : Min 0 °C | Max 0 °C

Taille : 91 KB

Application : NPN triple diffused planar silicon transistor, high-voltage amp, high-voltage switching application