MJD122-1 similaires

  • MJD112
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD117
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122-1
    • "NPN darlington transistor for high DC current gain, 100V, 5A"
  • MJD122T4
    • NPN darlington transistor for high DC current gain, 100V, 5A
  • MJD127-1
    • PNP darlington transistor for high DC current gain, 100V, 5A
  • MJD127T4
    • PNP darlington transistor for high DC current gain, 100V, 5A

MJD122-1 Datasheet et spécifications

Fabricant : ST Microelectronics 

Emballage : TO-252 

Pins : 3 

Température : Min -65 °C | Max 150 °C

Taille : 100 KB

Application : "NPN darlington transistor for high DC current gain, 100V, 5A" 

MJD122-1 PDF Download